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| AP4413M Advanced Power Electronics Corp. Simple Drive Requirement Low On-resistance Fast Switching Characteristic D D D D P-CHANNEL ENHANCEMENT MODE POWER MOSFET BVDSS RDS(ON) G -20V 30m -7.8A ID SO-8 S S S Description The Advanced Power MOSFETs from APEC provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The SO-8 package is universally preferred for all commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters. D G S Absolute Maximum Ratings Symbol VDS VGS ID@TA=25 ID@TA=70 IDM PD@TA=25 TSTG TJ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current 1 3 3 Rating -20 20 -7.8 -6.2 -30 2.5 0.02 -55 to 150 -55 to 150 Units V V A A A W W/ Continuous Drain Current Total Power Dissipation Linear Derating Factor Storage Temperature Range Operating Junction Temperature Range Thermal Data Symbol Rthj-a Parameter Thermal Resistance Junction-ambient 3 Value Max. 50 Unit /W Data and specifications subject to change without notice 200413042 AP4413M Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol BVDSS BVDSS/Tj Parameter Drain-Source Breakdown Voltage Static Drain-Source On-Resistance2 Test Conditions VGS=0V, ID=-250uA Min. -20 -0.5 - Typ. -0.01 16 17 4 7 12 11 40 13 250 210 4.3 Max. Units 30 40 65 -1.5 -1 -25 100 27 V V/ m m m V S uA uA nA nC nC nC ns ns ns ns pF pF pF Breakdown Voltage Temperature Coefficient Reference to 25, ID=-1mA RDS(ON) VGS=-10V, ID=-7A VGS=-4.5V, ID=-4A VGS=-2.5V, ID=-2A VGS(th) gfs IDSS IGSS Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss Rg Gate Threshold Voltage Forward Transconductance Drain-Source Leakage Current (Tj=25 C) Drain-Source Leakage Current (Tj=70 C) o o VDS=VGS, ID=-250uA VDS=-10V, ID=-7A VDS=-20V, VGS=0V VDS=-16V, VGS=0V VGS= 20V ID=-7A VDS=-16V VGS=-4.5V VDS=-10V ID=-2A RG=3.3,VGS=-10V RD=10 VGS=0V VDS=-25V f=1.0MHz f=1.0MHz Gate-Source Leakage Total Gate Charge 2 Gate-Source Charge Gate-Drain ("Miller") Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Gate Resistance 2 1140 1820 Source-Drain Diode Symbol VSD Parameter Forward On Voltage 2 2 Test Conditions IS=-2A, VGS=0V IS=-7A, VGS=0V, dI/dt=100A/s Min. - Typ. 28 22 Max. Units -1.2 V ns nC trr Qrr Reverse Recovery Time Reverse Recovery Charge Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse width <300us , duty cycle <2%. 3.Surface mounted on 1 in2 copper pad of FR4 board ; 125 /W when mounted on Min. copper pad. AP4413M 120 90 T A = 25 C 100 o -10V 80 T A = 150 C o -10V -7.0V -ID , Drain Current (A) -7.0V -ID , Drain Current (A) 70 80 60 -5.0V 50 60 -5.0V -4.5V 40 -4.5V 40 30 20 V G = - 2.5 V 20 V G = - 2.5 V 10 0 0 1 2 3 4 5 6 7 8 0 0 1 2 3 4 5 6 7 8 -V DS , Drain-to-Source Voltage (V) -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 70 1.6 60 ID=-4A T A =25 Normalized R DS(ON) 1.4 ID=-7A V G =-10V 50 RDS(ON) (m ) 1.2 40 1.0 30 0.8 20 10 0.6 1 3 5 7 9 11 -50 0 50 100 150 -V GS , Gate-to-Source Voltage (V) T j , Junction Temperature ( C) o Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 3 7 6 5 2 4 3 T j =150 o C T j =25 o C -VGS(th) (V) 1 0 1.4 -50 -IS(A) 2 1 0 0 0.2 0.4 0.6 0.8 1 1.2 0 50 100 150 -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( o C) Fig 5. Forward Characteristic of Reverse Diode Fig 6. Gate Threshold Voltage v.s. Junction Temperature AP4413M f=1.0MHz 12 10000 -VGS , Gate to Source Voltage (V) 10 I D = -7A V DS = -16V 8 6 C (pF) C iss 1000 4 2 C oss C rss 100 0 10 20 30 40 1 5 9 13 17 21 25 29 0 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 100 1 Duty factor=0.5 Normalized Thermal Response (Rthja) 10 0.2 1ms -ID (A) 0.1 0.1 0.05 1 10ms 100ms 1s 0.02 0.01 PDM 0.01 Single Pulse t T Duty factor = t/T Peak Tj = PDM x Rthja + Ta Rthja=125oC/W 0.1 T A =25 o C Single Pulse DC 0.01 0.1 1 10 100 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VDS 90% VG QG -4.5V QGS QGD 10% VGS td(on) tr td(off) tf Charge Q Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform |
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